Chinese Journal of Lasers, Volume. 11, Issue 1, 28(1984)
Investigation of temperature effects on characteristics of GaAlAs DH lasers
References(4)
[1] [1] Μ. Asada et al.; IEEE J. Quant. Electr.，1981, QE—17, 611, 619, 787, 796.
[2] [2] D. Botez; IEEE J. Quant. Electr., 1981，QE-17, 2300～2302.
[5] [5] H. C. Casey, Jr., Μ. Β. Panishj^Heterostructure Lasers, Part A, Part B，Academic Press, 1978.
[7] [7] H. Kressel. J. Κ. Butler; “Semiconductor Lasers and HeterojunctionLEDs",Academic Press,1977, 253.
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Zheng Guangfu, Zhan Suzhen. Investigation of temperature effects on characteristics of GaAlAs DH lasers[J]. Chinese Journal of Lasers, 1984, 11(1): 28
Paper Information
Category: laser devices and laser physics
Received: Nov. 26, 1982
Accepted: --
Published Online: Sep. 4, 2012
The Author Email:
CSTR:32186.14.
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