Journal of Semiconductors, Volume. 44, Issue 9, 092604(2023)

A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging

Zhenghao Long1, Yucheng Ding1, Xiao Qiu1, Yu Zhou1, Shivam Kumar1, and Zhiyong Fan1,2,3,4、*
Author Affiliations
  • 1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
  • 2State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
  • 3Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
  • 4Shanghai Artificial Intelligence Laboratory, Shanghai 200232, China
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    Figures & Tables(9)
    (Color online) (a) Schematic of a human eyeball and the retinal neuron array. (b) Schematic of an electric eye and the biomimetic nanowire array. (c) SEM image of the nanowire array, the scare bar refers to 1 μm. (d) The XRD pattern of CsPbI3 nanowires with Pb nano clusters. (e) The XRD pattern of ITO electrodes. (f) The XRD pattern of SnO2 nanotubes.
    (Color online) The fabrication process of the nanowire array.
    (a) Photo current at 0.01 V under 872 μW/cm2 illumination. (b) Photo current at 0.5 V under 143, 325, 573, 742, 872 μW/cm2 illuminations, respectively. (c) Photo current at 0.5 V under 872 μW/cm2 illuminations with different pulse widths. (d) Photo current at 0.5 V under 10 pulses of 872 μW/cm2 illumination. (e) Photo current at 0.5 V under 100 pulses of 872 μW/cm2 illumination. (f) Normalized Photo current at 0.5 V under 872 μW/cm2 illumination with 1 s pulse width after certain months. The device was kept in indoor environment with a temperature range of 5−35 °C and a humidity range of 30%−80%.
    (a)−(c) Spike frequency-dependent plasticity of the device under 872 μW/cm2 optical pulses with the same pulse widths and different pulse intervals at 0.5 V.
    Paired pulse facilitation of the device under 872 μW/cm2 optical pulses with (a) shorter and (b) longer pulse widths and pulse intervals at 0.5 V.
    (Color online) Paired pulse facilitation of the device at 0.5 V under 712 μW/cm2 optical pulses with wavelengths of (a) 650 nm, (b) 520 nm and (c) 405 nm, respectively.
    (Color online) (a)−(c) Working mechanism of standard mode. (a) Energy band diagram at 0.01 V bias. (b) Energy band diagram at 0.01 V bias under short time illumination. (c) Energy band diagram at 0.01 V bias under long time illumination. (d)−(f) Working mechanism of standard mode. (d) Energy band diagram at 0.5 V bias. (e) Energy band diagram at 0.5 V bias under short time illumination. (f) Energy band diagram at 0.5 V bias under long time illumination.
    (Color online) Imaging process flows of standard and neuromorphic modes.
    (Color online) (a) Schematic of the crossbar image sensor. (b) Schematic of the crossbar image sensor and its read-out circuit. (c) Input optical pattern for the imaging demonstrations. (d) Image acquired by the device under standard mode. (e) Images acquired by the device under neuromorphic mode after 1, 2, and 3 s learning process under exposure, and 1, 2, and 3 s forgetting process in dark environment.
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    Zhenghao Long, Yucheng Ding, Xiao Qiu, Yu Zhou, Shivam Kumar, Zhiyong Fan. A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging[J]. Journal of Semiconductors, 2023, 44(9): 092604

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    Paper Information

    Category: Articles

    Received: Aug. 30, 2023

    Accepted: --

    Published Online: Oct. 25, 2023

    The Author Email: Zhiyong Fan (eezfan@ust.hk)

    DOI:10.1088/1674-4926/44/9/092604

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