[1] [1] M Achtenhagen, N V Amarasinghe, L L Jiang, et al.. Spectral properties of high-power distributed Bragg reflector lasers[J]. J Lightwave Technol, 2009, 27(16): 3433-3437.

[2] [2] W Gao, A Mastrovito, K Luo, et al.. High-power 1060-nm InGaAs/GaAs single-mode laser diodes[C]. SPIE, 2005, 5711: 58-65.

[3] [3] S O Slipchenko, A A Podoskin, D A Vinokurov, et al.. AlGaAs/GaAs diode lasers (1020～1100 nm) with an asymmetric broadened single transverse mode waveguide[J]. Semiconductors, 2013, 47(8): 1079-1083.

[4] [4] H Wenzel, F Bugge, M Dallmer, et al.. Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence[J]. IEEE Photonics Technol Lett, 2008, 20(3): 214-216.

[5] [5] F Bugge, P Ressel, R Staske, et al.. High-power high-efficiency 1150-nm quantum-well laser [J]. IEEE J Sel Top Quantum Electron, 2005,11(5): 1217-1222.

[6] [6] H Wenzel, P Crump, A Pietrzak, et al.. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes[J]. New J Phys, 2010, 12(8): 085007.

[7] [7] B S Ryvkin, E A Avrutin. Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes[J]. J Appl Phys, 2005, 97(11): 113106.

[8] [8] S Tan, T Zhai, W Wang, et al.. Design and fabrication of high power single mode double-trench ridge waveguide laser[C]. SPIE, 2014, 89651B.

[9] [9] S Tan, T Zhai, W Wang, et al.. High power 1060-nm super large vertical cavity semiconductor lasers[C]. SPIE, 2014, 9266: 92660O.