Photonics Research, Volume. 3, Issue 1, 15(2015)
On-chip mode-locked laser diode structure using multimode interference reflectors
Fig. 1. (a) Two types of MIRs; (b) two types of OCMLLD structures.
Fig. 2. Photograph of two on-chip mode-locked lasers, using MIRs, with the SA at the two different locations.
Fig. 3. Experimental setup: AC, autocorrelator; EDFA, erbium doped fiber amplifier; ESA, electrical spectrum analyzer; I, current source; Iso, optical isolator; OSA, optical spectrum analyzer; PC, polarization controller; PD, photodiode; PM, power meter; −V, reverse bias voltage.
Fig. 4. (a) Optical power versus current (
Fig. 5. Optical spectrum of the OCMLLD in the mode-lock state; central wavelength, 1558 nm; span, 30 nm; inset shows the frequency mode spacing; resolution is 0.02 nm.
Fig. 6. Electrical spectrum of the OCMLLD; center frequency, 15 GHz; span, 30 GHz; resolution bandwidth (RBW), 1 MHz; video bandwidth (VBW), 1 MHz.
Fig. 7. (a) Pulsewidth versus gain section current level at fixed
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C.Gordon, R.Guzman, X.Leijtens, G.Carpintero, "On-chip mode-locked laser diode structure using multimode interference reflectors," Photonics Res. 3, 15 (2015)
Category: Mode-locked Lasers
Received: Sep. 22, 2014
Accepted: Oct. 24, 2014
Published Online: Apr. 15, 2015
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