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Journal of Semiconductors, Volume. 43, Issue 5, 052003(2022)

Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

Yafeng Deng1, Yixiang Li2, Pengfei Wang2, Shuang Wang2, Xuan Pan2, and Dong Wang1
Author Affiliations
  • 1Mechanical & Electrical Engineering College of Henan Agricultural University, Zhengzhou 450002, China
  • 2Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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    (Color online) The characterization of Gra/h-BN/Gra heterostructure. (a, b) The AFM characterization of the h-BN and graphite layer with the thickness and appearance displayed. (c, d) The Raman spectra of h-BN and the graphite layer.

    Fig. 1. (Color online) The characterization of Gra/h-BN/Gra heterostructure. (a, b) The AFM characterization of the h-BN and graphite layer with the thickness and appearance displayed. (c, d) The Raman spectra of h-BN and the graphite layer.

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    (Color online) The image and switching curves of the Gra/h-BN/Gra device. (a, b) The schematic diagram and optical microscope image of the memristive device. The scale bar is 10 μm. (c) Typical I–V curves of the Gra/h-BN/Gra device during the DC voltage sweep. The process of the DC voltage sweep is 0 → 4 → 0 → –4 → 0 V.

    Fig. 2. (Color online) The image and switching curves of the Gra/h-BN/Gra device. (a, b) The schematic diagram and optical microscope image of the memristive device. The scale bar is 10 μm. (c) Typical I–V curves of the Gra/h-BN/Gra device during the DC voltage sweep. The process of the DC voltage sweep is 0 → 4 → 0 → –4 → 0 V.

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    (Color online) The switching performances of a Gra/h-BN/Gra device. (a) The stable RS behavior. (b) The cumulative distribution plot of the high and low resistance measured over 40 cycles.

    Fig. 3. (Color online) The switching performances of a Gra/h-BN/Gra device. (a) The stable RS behavior. (b) The cumulative distribution plot of the high and low resistance measured over 40 cycles.

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    (Color online) The distributions of cycle-to-cycle (a) Vset and (b) Vreset.

    Fig. 4. (Color online) The distributions of cycle-to-cycle (a) Vset and (b) Vreset.

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    Yafeng Deng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan, Dong Wang. Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor[J]. Journal of Semiconductors, 2022, 43(5): 052003

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    Paper Information

    Category: Articles

    Received: Oct. 19, 2021

    Accepted: --

    Published Online: Jun. 10, 2022

    The Author Email:

    DOI:10.1088/1674-4926/43/5/052003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology