Fig. 1. Schematic of 850 nm VCSEL structure

Fig. 2. (a) PL spectrum of active region at 25 ℃; (b) white light reflection spectrum of VCSEL

Fig. 3. (a) Grid cells on the mask; (b) arrangement of chips in the grid cells; (c) oxidation aperture distribution in each cell on the wafer under the infrared light source CCD; (d) size of oxidation aperture on each cell of the wafer

Fig. 4. Images of 1×4 VCSEL array

Fig. 5. (a) P-I-V curves of 1×4 VCSEL array; (b) spectrum of VCSEL

Fig. 6. Far field spot and divergence angle of single VCSEL

Fig. 7. (a) Box diagram of VCSEL threshold current; (b) box diagram of VCSEL optical output power at driving current of 6 mA; (c) box diagram of VCSEL wavelength at driving current of 6 mA

Fig. 8. High-speed test platform with pulse large signal

Fig. 9. Four-channel optical eye diagrams after signal with modulation rate of 15 Gbit/s transmission in multimode fiber for 1.5 m. (a) P1 channel; (b) P2 channel; (c) P3 channel; (d) P4 channel