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Optical Instruments, Volume. 42, Issue 5, 12(2020)

Silicon doping impact on magnetotransport in InAs/GaSb type-II superlattices

Zhichao YING1,2, Zhiyong SONG2,3, Aiying CHEN1, Tie LIN2, and Shixiong KANG1、*
Author Affiliations
  • 1School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 3Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200063, China
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    [2] CHOW D H, MILES R H, SÖDERSTRÖM J R. Growth and characterization of InAs/Ga1-xInxSb strained-layer superlattices[J]. Applied Physics Letters, 56, 1418-1420(1990).

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    [4] FUCHS F, WEIMER U, PLETSCHEN W. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes[J]. Applied Physics Letters, 71, 3251-3253(1997).

    [5] MILES R H, CHOW D H, SCHULMAN J N. Infrared optical characterization of InAs/Ga1-xInxSb superlattices[J]. Applied Physics Letters, 57, 801-803(1990).

    [6] WEI Y, GIN A, RAZEGHI M. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications[J]. Applied Physics Letters, 80, 3262-3264(2002).

    [7] HUANG Y, RYOU J H, DUPUIS R D. Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition[J]. Applied Physics Letters, 99, 011109(2011).

    [8] HUANG Y, XIONG M, WU Q H. High-performance mid-wavelength InAs/GaSb superlattice infrared detectors grown by production-scale metalorganic chemical vapor deposition[J]. IEEE Journal of Quantum Electronics, 53, 4000305(2017).

    [9] HERLING F, MORRISON C, KNOX C S. Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization[J]. Physical Review B, 95, 155307(2017).

    [10] KIM H S, PLIS E, RODRIGUEZ J B. N-type ohmic contact on type-II InAs/GaSb strained layer superlattices[J]. Electronics Letters, 44, 881-882(2008).

    [11] LEE J, FREDRICKSEN C J, FLITSIYAN E. Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices[J]. Journal of Applied Physics, 123, 235104(2018).

    [12] HE H T, WANG G, ZHANG T. Impurity effect on weak antilocalization in the topological insulator Bi2Te3[J]. Physical Review Letters, 106, 166805(2011).

    [13] BERGMANN G. Weak localization in thin films: a time-of-flight experiment with conduction electrons[J]. Physics Reports, 107, 1-58(1984).

    [14] KAWABATA A. Theory of negative magnetoresistance in three-dimensional systems[J]. Solid State Communications, 34, 431-432(1980).

    [15] LV Z R, ZHANG Z K, YANG X G. Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping[J]. Applied Physics Letters, 113, 011105(2018).

    [16] DHIFALLAH I, DAOUDI M, OUERGHLI A. Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures[J]. Superlattices and Microstructures, 49, 519-526(2011).

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    Zhichao YING, Zhiyong SONG, Aiying CHEN, Tie LIN, Shixiong KANG. Silicon doping impact on magnetotransport in InAs/GaSb type-II superlattices[J]. Optical Instruments, 2020, 42(5): 12

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    Paper Information

    Category: APPLICATION TECHNOLOGY

    Received: Dec. 28, 2019

    Accepted: --

    Published Online: Jan. 6, 2021

    The Author Email: Shixiong KANG (sky.chris@icloud.com)

    DOI:10.3969/j.issn.1005-5630.2020.05.003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology