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Acta Physica Sinica, Volume. 69, Issue 9, 098501-1(2020)

Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Fu Chen1,2, Wen-Xin Tang1,2, Guo-Hao Yu2、*, Li Zhang2, Kun Xu2, and Bao-Shun Zhang2、*
Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 2Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(6)
    Cross-sectional schematic of a vertical GaN UMOSFET.

    Fig. 1. Cross-sectional schematic of a vertical GaN UMOSFET.

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    Electrical characteristics of GaN UMOSFETs fabricated with RF power of 50, 75 and 135 W (IGS and IDS are gate and drain currents): (a) Transfer characteristics; (b) field-effect channel mobility as a function of gate voltage; (c) subthreshold characteristics; (d) breakdown characteristics.

    Fig. 2. Electrical characteristics of GaN UMOSFETs fabricated with RF power of 50, 75 and 135 W (IGS and IDS are gate and drain currents): (a) Transfer characteristics; (b) field-effect channel mobility as a function of gate voltage; (c) subthreshold characteristics; (d) breakdown characteristics.

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    Electrical characteristics of GaN UMOSFETs with SiO2 and photoresist as etching masks: (a) Transfer characteristics; (b) field-effect channel mobility vs. gate voltage; (c) output characteristics; (d) subthreshold characteristics.

    Fig. 3. Electrical characteristics of GaN UMOSFETs with SiO2 and photoresist as etching masks: (a) Transfer characteristics; (b) field-effect channel mobility vs. gate voltage; (c) output characteristics; (d) subthreshold characteristics.

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    (a) Etching morphology of the U-shape trench using different etching masks; (b) high-energy ion reflection at the sidewall of etching masks.

    Fig. 4. (a) Etching morphology of the U-shape trench using different etching masks; (b) high-energy ion reflection at the sidewall of etching masks.

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    SEM image of U-shape trench after dry etching with photoresist etching mask.

    Fig. 5. SEM image of U-shape trench after dry etching with photoresist etching mask.

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    • Table 1. Experiment parameters of the dry etching process.

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      Table 1. Experiment parameters of the dry etching process.

      条件刻蚀气体及流量RF功率/WICP功率/W腔室压强/mTorr刻蚀掩模
      A24 sccm Cl2, 16 sccm BCl3, 5 sccm Ar 1355008光刻胶(PR)
      B75
      C50
      D50SiO2
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    Fu Chen, Wen-Xin Tang, Guo-Hao Yu, Li Zhang, Kun Xu, Bao-Shun Zhang. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(9): 098501-1

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    Paper Information

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    Received: Dec. 5, 2019

    Accepted: --

    Published Online: Nov. 26, 2020

    The Author Email: Bao-Shun Zhang (bszhang2006@sinano.ac.cn)

    DOI:10.7498/aps.69.20191850

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