INFRARED, Volume. 44, Issue 10, 15(2023)

on Back Thinning Technology of InAs/GaSbType-II Superlattice Infrared Detector

Xiao-qian WANG, Yu-nong HU, Cong-ya YOU, Jing-feng LI, Hai-yan LI, and Ming LIU
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    References(5)

    [1] [1] Sakaki H, Chang L L, Sai-Halasz G A, et al. Two-dimensional Electronic Structure in InAs-GaSb Superlattices \[J\]. Solid State Communications, 1978, 26(9): 589-592.

    [2] [2] Smith D L, Mailhiot C. Proposal for Strained Type II Superlattice Infrared Detectors \[J\]. Journal of Applied Physics, 1987, 62(6): 2545-2548.

    [3] [3] Talwar D N,Jogai B, Loehr J P. Novel Type II Strained Layer Superlattices for Long Wavelength Infrared Detectors \[J\]. Materials Science and Engineering: B, 1998, 51(1-3): 12-17.

    [5] [5] Hoang A M, Dehzangi A, Adhikary S, et al. High Performance Bias-selectable Three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors Based on Type-II InAs/GaSb/AlSb Superlattices \[J\]. Scientific Reports, 2016, 6: 1-7.

    [6] [6] Bai Y B, Bai Y B, Zhao Y W, et al. N-type GaSb Single Crystals with High Below-band Gap Transmission \[J\]. Chinese Physics B, 2017, 26(10): 107801.

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    WANG Xiao-qian, HU Yu-nong, YOU Cong-ya, LI Jing-feng, LI Hai-yan, LIU Ming. on Back Thinning Technology of InAs/GaSbType-II Superlattice Infrared Detector[J]. INFRARED, 2023, 44(10): 15

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    Paper Information

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    Received: Mar. 27, 2023

    Accepted: --

    Published Online: Jan. 16, 2024

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2023.10.003

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