Acta Optica Sinica, Volume. 45, Issue 15, 1504002(2025)

Preparation and Ultraviolet Detection Performance of Porous Ga2O3/GaN Heterojunctions

Henglei Ren1, Wei Jia1、*, Hailiang Dong1, Kaida Jia1, Rui Wang1, Pengqi Dong2, and Bingshe Xu1,3
Author Affiliations
  • 1Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China
  • 2The Institute of Architectural Design and Research of Taiyuan University of Technology Co., Ltd, Taiyuan 030024, Shanxi , China
  • 3Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, Shanxi , China
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    References(29)

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    [8] Fu S S, Xiao Q Q, Tang H Z et al. First principles study on electronic structure and optical properties of Lu doped GaN at different doping concentration[J]. Acta Optica Sinica, 44, 0916001(2024).

    [10] Xu Q, Yang L L, Liu Z et al. Preparation and study of Ag nanoparticles composite amorphous gallium oxide photodetector[J]. Acta Optica Sinica, 43, 2004003(2023).

    [16] Meng R L, Ji X L, Zhang Y H et al. A β-Ga2O3 solar-blind ultraviolet photodetector prepared by thermal oxidization of GaN[J]. Semiconductor Optoelectronics, 40, 637-642(2019).

    [21] Liang Y, Wang S, Guo J B et al. Preparation and performance research of dual-band ultraviolet detector with porous GaN/Ga2O3 heterojunction[J]. Nonferrous Metal Materials and Engineering, 46, 75-82(2025).

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    Henglei Ren, Wei Jia, Hailiang Dong, Kaida Jia, Rui Wang, Pengqi Dong, Bingshe Xu. Preparation and Ultraviolet Detection Performance of Porous Ga2O3/GaN Heterojunctions[J]. Acta Optica Sinica, 2025, 45(15): 1504002

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    Paper Information

    Category: Detectors

    Received: Mar. 24, 2025

    Accepted: May. 8, 2025

    Published Online: Aug. 18, 2025

    The Author Email: Wei Jia (jiawei@tyut.edu.cn)

    DOI:10.3788/AOS250781

    CSTR:32393.14.AOS250781

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