Fig. 1. S_EE and IPR(0) versus chemical potential μ for the doped system with J / t = 8 at T = ∞.

Fig. 1. DOS of conduction electron N(ω) in MI (J / t = 15) at different temperatures: (a) T / t = 0.1, (b) T / t = 0.4, (c) T / t = 0.8. With increasing temperature, the DOS at Fermi surface increases and the gap decreases.

Fig. 1. Finite temperature phase diagram of Ising–Kondo lattice (IKL) model on square lattice (Eq. 1) from classical Monte Carlo (MC) simulation. There exist Fermi liquid (FL), Mott insulator (MI), Néel antiferromagnetic insulator (NAI) and an Anderson localization (AL) phase.

Fig. 2. Density of state (DOS) of conduction electron N(ω) in (a) FL (J / t = 2), (b) AL (J / t = 8) and (c) MI (J / t = 14) phases at T / t = 0.4.

Fig. 2. The IPR versus temperature at J / t = 15, which is calculated at thermodynamic limit.

Fig. 3. Inverse participation ratio (IPR) of conduction electron IPR(ω) in (a) FL (J / t = 2), (b) AL (J / t = 8) and (c) MI (J / t = 14) phases at T / t = 0.4. (d) Finite-size extrapolation of IPR at Fermi energy ω = 0.

Fig. 4. Temperature-dependent resistance of conduction electron ρ versus T for different Kondo coupling J / t. Red dots indicate magnetic critical temperature T_c.

Fig. 5. The DOS and IPR for J / t = 8 at effective temperature T = ∞.

Fig. 6. The entanglement entropy S_EE of many-body wavefunction (7) for different boundary size L_c between two subsystems and different Kondo coupling J.