Acta Optica Sinica, Volume. 30, Issue 5, 1390(2010)

808 nm Edge-Emitting Diode Lasers Characteristic Temperatures

Liang Xuemei1,2、*, Qin Li1, Wang Ye1,2, Yang Ye1,2, Li Zaijin1, Wang Chao1, Ning Yongqiang1, and Wang Lijun1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(14)

    [1] [1] R. Williamson,Manoj Kanskar. Improving the efficiency of high-power diode lasers. Compound Semiconductor,compoundsemiconductor.net

    [10] [10] H. Wenzel,G. Erbert,F. Bugge et al.. Optimization of GaAsP-QW′s for high power diode lasers at 800 nm[C]. SPIE,2000,3947:32-39

    [11] [11] Jiang Jianping. Semiconducor Laser[M]. Beijing:Publishing House of Electronics Industry,2000. 109-110

    [12] [12] Roland Diehl. High Power Diode Lasers[M]. Heidelberg:Springer,2000. 200-201

    [13] [13] Calculation method discrepancy of threshold current. Technical document of ILX Lightwave Corporation

    [14] [14] H. G. Treusch,J. Harrison,B. Morris et al.. Compact high brightness and high power diode laser source for material processing[C]. SPIE,2000,3945:23-31

    CLP Journals

    [1] Wang Yue, Liu Guojun, Li Juncheng, An Ning, Li Zhanguo, Wang Yuxia, Wei Zhipeng. Study of the Ohmic Contact of GaSb-Based Semiconductor Laser[J]. Chinese Journal of Lasers, 2012, 39(1): 102010

    Tools

    Get Citation

    Copy Citation Text

    Liang Xuemei, Qin Li, Wang Ye, Yang Ye, Li Zaijin, Wang Chao, Ning Yongqiang, Wang Lijun. 808 nm Edge-Emitting Diode Lasers Characteristic Temperatures[J]. Acta Optica Sinica, 2010, 30(5): 1390

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 11, 2009

    Accepted: --

    Published Online: May. 11, 2010

    The Author Email: Xuemei Liang (liangxuemei1026@hotmail.com)

    DOI:10.3788/aos20103005.1390

    Topics