Diamond as an ultra-wide band gap semiconductor material shows excellent properties in thermal conductivity, carrier mobility and breakdown field strength, and has broad application prospects in the field of power electronics. The realization of p-type and n-type conduction is essential to fabricate diamond electronic devices. Between them, the development of p-type diamond is relatively mature, and boron is the mainstream doping element. However, the hole mobility decreases rapidly at a high doping concentration. The main doping element of n-type diamond is phosphorus. At present, there are still challenges such as deep impurity level, large ionization energy, and defects in diamond crystals after doping, resulting in low carrier concentration and mobility, and the resistivity is difficult to meet the requirements of devices. Therefore, the realization of high quality p-type and n-type diamond has become the focus of researchers. This paper mainly introduces the unique physical properties of single crystal diamond, outlines the basic principles and key parameters of the chemical vapor deposition method and ion implantation method of doping, then reviews the research progress on the p-type and n-type doping of single crystal diamond films by the two methods, systematically summarizes the facing problems and the prospects of future development.