Optoelectronic Technology, Volume. 40, Issue 4, 302(2020)

Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED

Ying GAO1 and Xingyu ZHOU2
Author Affiliations
  • 1Guangdong Liangyang Middle School, YangJiang Guangdong 529500,CHN
  • 2Shenzhen Huaxing Optoelectronic Semiconductor Display Technology Co., Ltd., Shenzhen Guangdong 518000, CHN
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    References(5)

    [1] [1] H J Shin, J, ParkK M, TakasugiS, et al ShinH, K M Park, J, ParkK M, TakasugiS, et al ShinH, S Takasugi and J, ParkK M, TakasugiS, et al ShinH. A high image quality OLED display for large size and premium TVs. SID Symposium Digest of Technical Papers. 48(1), 1134-1137(2017).

    [2] [2] H S Shin, S, JeongJ K, MoY G, et al ShinH, J K Jeong, S, JeongJ K, MoY G, et al ShinH, Y G Mo and S, JeongJ K, MoY G, et al ShinH. Organic light emitting display (OLED) and its method of fabrication. (0).

    [4] [4] Y Shima, JinchoM, HamochiT, et al ShimaY,, M Jincho, JinchoM, HamochiT, et al ShimaY,, T Hamochi and JinchoM, HamochiT, et al ShimaY,. Development of a top-gate transistor with short channel length and c-axis aligned crystalline indium gallium zincoxide for high-resolution panels. SID Symposium Digest of Technical Papers. 47(1), 1037-1040(2016).

    [6] [6] W T Chen, T, HsuehH W, ZanH W, et al ChenW, H W Hsueh, T, HsuehH W, ZanH W, et al ChenW, H W Zan and T, HsuehH W, ZanH W, et al ChenW. Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors. Electrochemical and Solid-State Letters. 14(7), 297-299(2011).

    [7] [7] Kim Miryeon, WookyungSun, JongseukKang, et al MiryeonKim,, Sun Wookyung, WookyungSun, JongseukKang, et al MiryeonKim,, Kang Jongseuk and WookyungSun, JongseukKang, et al MiryeonKim,. The effect of a S-contacted light shield on the electrical characteristics of an LTPS TFT. Semiconductor Science Technology. 32(8), (2017).

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    Ying GAO, Xingyu ZHOU. Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED[J]. Optoelectronic Technology, 2020, 40(4): 302

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    Paper Information

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    Received: Jul. 29, 2020

    Accepted: --

    Published Online: Jan. 12, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2020.04.012

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