Optoelectronic Technology, Volume. 40, Issue 4, 302(2020)
Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED
[1] [1] H J Shin, J, ParkK M, TakasugiS, et al ShinH, K M Park, J, ParkK M, TakasugiS, et al ShinH, S Takasugi and J, ParkK M, TakasugiS, et al ShinH. A high image quality OLED display for large size and premium TVs. SID Symposium Digest of Technical Papers. 48(1), 1134-1137(2017).
[2] [2] H S Shin, S, JeongJ K, MoY G, et al ShinH, J K Jeong, S, JeongJ K, MoY G, et al ShinH, Y G Mo and S, JeongJ K, MoY G, et al ShinH. Organic light emitting display (OLED) and its method of fabrication. (0).
[4] [4] Y Shima, JinchoM, HamochiT, et al ShimaY,, M Jincho, JinchoM, HamochiT, et al ShimaY,, T Hamochi and JinchoM, HamochiT, et al ShimaY,. Development of a top-gate transistor with short channel length and c-axis aligned crystalline indium gallium zincoxide for high-resolution panels. SID Symposium Digest of Technical Papers. 47(1), 1037-1040(2016).
[6] [6] W T Chen, T, HsuehH W, ZanH W, et al ChenW, H W Hsueh, T, HsuehH W, ZanH W, et al ChenW, H W Zan and T, HsuehH W, ZanH W, et al ChenW. Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors. Electrochemical and Solid-State Letters. 14(7), 297-299(2011).
[7] [7] Kim Miryeon, WookyungSun, JongseukKang, et al MiryeonKim,, Sun Wookyung, WookyungSun, JongseukKang, et al MiryeonKim,, Kang Jongseuk and WookyungSun, JongseukKang, et al MiryeonKim,. The effect of a S-contacted light shield on the electrical characteristics of an LTPS TFT. Semiconductor Science Technology. 32(8), (2017).
Get Citation
Copy Citation Text
Ying GAO, Xingyu ZHOU. Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED[J]. Optoelectronic Technology, 2020, 40(4): 302
Category:
Received: Jul. 29, 2020
Accepted: --
Published Online: Jan. 12, 2021
The Author Email: