Optoelectronic Technology, Volume. 40, Issue 4, 302(2020)

Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED

Ying GAO1 and Xingyu ZHOU2
Author Affiliations
  • 1Guangdong Liangyang Middle School, YangJiang Guangdong 529500,CHN
  • 2Shenzhen Huaxing Optoelectronic Semiconductor Display Technology Co., Ltd., Shenzhen Guangdong 518000, CHN
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    Top-gate self-aligned a-IGZO TFT is suitable for driving OLED displays for its tiny parasitic capacitors. In order to improve the stability of TFT device under illumination condition, the driving TFT usually needs light shading layer. In this paper, the influence of the light shading layer, the selection of its signal connection, the thickness of the buffer layer and the size of the light shading layer were explored. The results showed that: (1) the light shading layer could effectively reduce the negative bias caused by the light of TFT, (2) the light shading layer connecting signal was more stable than the floating one, and the TFT whose shading layer was connected to the source electrode was more easily saturated, which could be helpful to carry out OLED, (3) buffer layer thickness of 400 μm was more favorable for device performance, (4) the light shading layer should cover IGZO, and its size should be as large as possible, which could effectively improve the device reliability.

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    Ying GAO, Xingyu ZHOU. Research on the Shading Layer in Self?aligned Top?gate Thin Film Transistors Based on Amorphous Oxide for OLED[J]. Optoelectronic Technology, 2020, 40(4): 302

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    Paper Information

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    Received: Jul. 29, 2020

    Accepted: --

    Published Online: Jan. 12, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2020.04.012

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