Chinese Journal of Lasers, Volume. 24, Issue 8, 725(1997)

Quantum Confinement Effect in Different shaped Quantum Wells

[in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]1
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  • 2[in Chinese]
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    References(4)

    [1] [1] K.-K. Law, R. H. Yan, A. C. Gossard et al.. Electronic-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique. J. Appl. Phys., 1990, 67(10): 6461~6465

    [2] [2] T. Ishikawa, S. Nishimura, K. Tada. Quantum-confined stark effect in a parabolic potential quantum well. Japan J. Appl. Phys., 1990, 29(8): 1466~1473

    [3] [3] S. L. Chuang. Efficient band-structure calculations of strained quantum wells. Phys. Rev., 1991, 43(12): 9649~9661

    [4] [4] T. Ishikawa, J. E. Bowers. Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well. IEEE J. Quant. Electr., 1994, QE-30(2): 562~569

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Quantum Confinement Effect in Different shaped Quantum Wells[J]. Chinese Journal of Lasers, 1997, 24(8): 725

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    Paper Information

    Category: Laser physics

    Received: Jun. 21, 1996

    Accepted: --

    Published Online: Oct. 31, 2006

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