Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Optics Letters, Volume. 12, Issue 10, 102702(2014)

High-strain InGaAs/GaAs quantum well grown by MOCVD

Gu Lei1, Li Lin1, Qiao Zhongliang1, Kong Lingyi2, Yuan Huibo1, Liu Yang1, Dai Yin1, Bo Baoxue1, and Liu Guojun1
Author Affiliations
  • 1National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2AIXTRON China Limited, Shanghai 200052, China
    • show less
    AbstractGet PDF
    References (22)
    Cited By (6)
    Tools
    Paper Information
    Topics
    Cited By

    Article index updated: Feb. 20, 2025

    Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.
    The article is cited by 6 article(s) from Web of Science.
    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
    Tools

    Get Citation

    Copy Citation Text

    Gu Lei, Li Lin, Qiao Zhongliang, Kong Lingyi, Yuan Huibo, Liu Yang, Dai Yin, Bo Baoxue, Liu Guojun, "High-strain InGaAs/GaAs quantum well grown by MOCVD," Chin. Opt. Lett. 12, 102702 (2014)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Quantum Optics

    Received: Feb. 26, 2014

    Accepted: Jul. 3, 2014

    Published Online: Sep. 5, 2014

    The Author Email:

    DOI:10.3788/col201412.102702

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology