[1] [1] Haisma J, Spierings B A C M, Biermann U K P, et al. Diversity and feasibility of direct bonding: a survey of a dedicated optical technology [J]. Applied Optics, 1994, 33(7): 1154-1169.

[2] [2] Lee H C, Meissner O R, Meissner H E. Characteristics of AFB interfaces of dissimilar crystal composites as components for solid state lasers[M]∥Jin G F, Li J Z. Laser metrology. Beijing: Science Press, 1998: 162-165.

[3] [3] Lee H, Meissner H E, Meissner O R. Adhesive-free bond (AFB) CVD diamond/sapphire and CVD diamond/YAG crystal composites[C]. SPIE, 2006, 6216: 62160O.

[4] [4] Steng l R, Mitani K, Lehman V, et al. Silicon wafer bonding: chemistry, elasto-mechanics and manufacturing[C]. IEEE SOS/SOI Technology Conference, Stateline, Nevada, 1989: 123-124.

[5] [5] Tong Q Y, Gsele U, Thickness considerations in direct silicon wafer bonding [J]. Journal Electrochemical Society,1995, 142 (11): 3975-3979.

[6] [6] Yu H H, Suo Z. A model of wafer bonding by elastic accommodation[J]. Journal of the Mechanics and Physics of Solids, 1998, 46(5): 829-844.

[7] [7] Fan H, Xu J G, Sze K Y. Energy-rate consideration in wafer bonding[J]. Finite Elements in Analysis and Design, 2006, 42(8-9): 709-714.

[8] [8] Gui C, Elwenspoek M, Tas N, et al. The effect of surface roughness on direct wafer bonding[J]. Journal of Applied Physics, 1999, 85(10): 7448-7454.

[9] [9] Liao G, Shi T, Lin X, et al. Effect of surface characteristic on room-temperature silicon direct bonding[J]. Sensors and Actuators A, 2010, 158(2): 335-341.

[10] [10] Ma Ziwen. Experimental and theoretical study on low-temperature wafer bonding[D]. Wuhan: Huazhong University of Science and Technology, 2007: 25.

[11] [11] Israelachvili J N. Intermolecular and surface forces[M]. 3rd edition. New York: Academic Press, 2011: 277.

[12] [12] Lifshitz E M. The theory of molecular attractive forces between solids[J]. Soviet Physics, 1956, 2(1): 73-83.

[13] [13] Bergstrm L. Hamaker constants of inorganic materials[J]. Advances in Colloid and Interface Science, 1997, 70: 125-169.

[14] [14] Hurrell J P, Porto S P, Chang I F, et al. Optical phonons of yttrium aluminum garnet [J]. Physical Review, 1968, 173(3): 851-856.