High Power Laser and Particle Beams, Volume. 37, Issue 6, 065004(2025)

Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based on Fe-doped β-Ga2O3

Kun Xu, Zhipeng Chen, Zhouyang Lin, Zhong Zheng, Qian Sun, Yutian Wang*, and Bo Peng
Author Affiliations
  • Faculty of Integrated Circuit , Xidian University, Xi’an 710071, China
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    Figures & Tables(12)
    PCSS fabricated by encapsulating gallium oxide with copper electrodes
    Diagram of test system and experimental circuit
    Deep level information of Fe:β-Ga2O3 PCSS
    Maximum output under increasing input voltage and output pulse at 10 kV of experiment 1
    Results of experiment 2 with comparative analysis against experiment 1
    Maximum output of 5180 pulse and the 1st and 5,180th output pulses
    Simulation results showing the electric field distribution
    Damaged PCSS
    Fracture surface of Fragment A
    Fracture surface of Fragment B
    • Table 1. Carrier mobility in principal semiconductor materials

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      Table 1. Carrier mobility in principal semiconductor materials

      mobility(μ/cm2·V−1·s−1)
      SiGeGaAs4H-SiCGaNβ-Ga2O3diamond(C)
      hole3001900100~3000901083800
      electron148039008400100012003004500
    • Table 2. EDS results at 4 spots

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      Table 2. EDS results at 4 spots

      atom percentage/%
      GaOC
      EDS spot111.058.8867.20
      EDS spot224.7613.4061.65
      EDS spot344.6216.5838.80
      EDS spot436.6417.2546.11
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    Kun Xu, Zhipeng Chen, Zhouyang Lin, Zhong Zheng, Qian Sun, Yutian Wang, Bo Peng. Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based on Fe-doped β-Ga2O3[J]. High Power Laser and Particle Beams, 2025, 37(6): 065004

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    Paper Information

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    Received: Dec. 15, 2024

    Accepted: Feb. 24, 2025

    Published Online: Jun. 23, 2025

    The Author Email: Yutian Wang (ytwang@xidian.edu.cn)

    DOI:10.11884/HPLPB202537.240426

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