Laser & Optoelectronics Progress, Volume. 62, Issue 3, 0300001(2025)

Research Progress on Tunable Narrow Linewidth Semiconductor Lasers Integrated with External Cavity

Luotian Huang*... Gengqin Liang, Zongge Li, Peiguang Yan and Jinchuan Guo |Show fewer author(s)
Author Affiliations
  • Guangdong Province Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong , China
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    References(84)

    [5] Wan H R, Yang Y L, Qiao Z L et al. Design and simulation of silicon-based tunable external cavity diode lasers in the 1967-2033 nm wavelength range[J]. Chinese Journal of Lasers, 51, 0601010(2024).

    [6] Zhang Y S, Zhao T F, Shi J Q et al. Monolithic integrated two-section dual-wavelength distributed feedback semiconductor laser[J]. Acta Optica Sinica, 43, 1014002(2023).

    [7] Deng L H, Yan B Y, Liang W. Continuous tunable narrow linewidth external cavity semiconductor laser[J]. Chinese Journal of Lasers, 50, 2315001(2023).

    [34] Zhou Z P[M]. Silicon based optoelectronics(2012).

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    Luotian Huang, Gengqin Liang, Zongge Li, Peiguang Yan, Jinchuan Guo. Research Progress on Tunable Narrow Linewidth Semiconductor Lasers Integrated with External Cavity[J]. Laser & Optoelectronics Progress, 2025, 62(3): 0300001

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    Paper Information

    Category: Reviews

    Received: Apr. 25, 2024

    Accepted: Jun. 5, 2024

    Published Online: Feb. 20, 2025

    The Author Email:

    DOI:10.3788/LOP241171

    CSTR:32186.14.LOP241171

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