Chinese Journal of Lasers, Volume. 31, Issue 6, 649(2004)
Quasi-CW 17 kW 808 nm GaAs/AlGaAs Stack Laser Diode Arrays
References(3)
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[5] [5] M. A. Emanuel, N. W. Carlson, J. A. Skidmore. High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size [J]. IEEE Photon. Technol. Lett., 1996, 8(10):1291～1293
[7] [7] J. K. Wade, L. J. Mawst, D. Botez et al.. 8.8 W CW power from broad-waveguide Al-free active-region (λ=805 nm) diode lasers [J]. Electron. Lett., 1998, 34(11):1100～1101
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Quasi-CW 17 kW 808 nm GaAs/AlGaAs Stack Laser Diode Arrays[J]. Chinese Journal of Lasers, 2004, 31(6): 649
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