Chinese Optics, Volume. 18, Issue 2, 393(2025)
Design of high-speed MUTC-PD with electric field regulation layer
Fig. 2. SMUTC-PD’s electric field intensity distribution at different doping concentrations in the electric field regulation layer
Fig. 3. SMUTC-PD’s electron velocity distributions at different doping concentrations in the electric field regulation layer
Fig. 4. SMUTC-PD’s hole velocity distributions at different doping concentrations in the electric field regulation layer
Fig. 5. SMUTC-PD’s frequency response and parasitic capacitance with different collector layer thicknesses
Fig. 6. SMUTC-PD’s photo-response bandwidth and parasitic capacitance with different doping concentrations in the p-doped absorption region
Fig. 7. SMUTC-PD’s photo-response bandwidth and parasitic capacitance with different thicknesses of the p-doped absorption region
Table 1. Material parameters of the simulation
View tableView in ArticleTable 1. Material parameters of the simulation
Parameter InP InGaAs Electron mobility, μn 5400 cm2/Vs12000 cm2/VsHole mobility, μp 200 cm2/Vs 300 cm2/Vs Conduction band density of states, Nc 1.1×1019 cm−3 7.7×1018 cm−3 Valence band density of states, Nv 5.7×1017 cm−3 2.1×1017 cm−3 Electron saturation velocity 2.6×107 cm/s 2.5×107 cm/s Hole saturation velocity 5×106 cm/s 5×106 cm/s Electron and hole lifetime 2×10−9 s 1×10−7 s Electron auger coefficient 3.7×10−31 cm6/s 3.2×10−28 cm6/s Hole auger coefficient 8.7×10−30 cm6/s 3.2×10−28 cm6/s Real refractive index 3.2 3.51 Imaginary refractive index 0 0.106
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Jian-bo XU, Kai LIU, Xiao-wen DONG, Xiao-feng DUAN, Yong-qing HUANG, Qi WANG, Xiao-min REN. Design of high-speed MUTC-PD with electric field regulation layer[J]. Chinese Optics, 2025, 18(2): 393
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Received: Sep. 26, 2024
Accepted: Dec. 10, 2024
Published Online: May. 19, 2025
The Author Email: Kai LIU (kliu@bupt.edu.cn)
