[2] [2] Ming C. Wu, N. A. Olsson, D. Sivco et al.. A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier [J]. Appl. Phys. Lett., 1990, 56(3):221～223

[3] [3] Witzigmann Bernd, S. Mark, A. Hybertsen. Theoretical investigation of the characteristic temperature T0 for semiconductor lasers [J]. IEEE J. Sel. Top. Quantum Electron., 2003, 9(3):807～815

[7] [7] T. Kobayashi, Y. Furukawa. Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current [J]. Jpn. J . Appl. Phys., 1975, 14(12):1981～1986

[8] [8] J. P. Van der Ziel, Naresh Chand. High-temperature operation (to 180 ℃) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers [J]. Appl. Phys. Lett., 1991, 58(13):1437～1439