Fig. 1. Structure of the total internal reflection photoconductive switch optical system

Fig. 2. Trajectory of the incident light. (a) Trajectory of the captured light; (b) trajectory of the escaped light

Fig. 3. Mathematical model of the incident window

Fig. 4. Spatial distribution of α1 satisfying the condition of total internal reflection

Fig. 5. Influence of different parameters on absorption efficiency. (a) R; (b) D; (c) θ1; (d) transmittance of the 4H-SiC

Fig. 6. Influence of different parameters on uniformity. (a) R; (b) D; (c) θ1; (d) transmittance of the 4H-SiC

Fig. 7. Effective reflection times under different transmittances

Fig. 8. Three-dimensional data and pseudo-color graphs of the absorbed flux of different total internal reflection photoconductive switches. (a) High-efficiency; (b) initial structure; (c) high uniformity and low absorption rate