Photonics Research, Volume. 5, Issue 2, A44(2017)
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
Fig. 1. Spectral distribution of the EL at various temperatures and a current of 1 mA. The four main emission peaks are labeled in the figure.
Fig. 2. Intensity of the QW emission for different temperatures and currents.
Fig. 3. Arrhenius plot of the intensity of the QW emission and fit according to Eq. (
Fig. 4. Temperature dependence of the peak wavelength of the QW emission. Inset: bandgap narrowing with increasing temperature in accordance with Varshni’s law.
Fig. 5. Intensity of the QW emission for different temperatures and currents fitted by Eqs. (
Fig. 6. Numerical simulation of the band diagram and of electron and hole concentration at 140 and 300 K at a current of 10 mA.
Fig. 7. Arrhenius plot of the peak 3 intensity for different currents fitted by the complete SRH model [Eqs. (
Fig. 8. Arrhenius plot of the peak 4 intensity for different currents fitted by the complete SRH model [Eq. (
Fig. 9. Intensity of the QW emission at different temperatures fitted by the complete SRH model [Eq. (
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Carlo De Santi, Matteo Meneghini, Desiree Monti, Johannes Glaab, Martin Guttmann, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, "Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs," Photonics Res. 5, A44 (2017)
Special Issue: RECENT DEVELOPMENTS IN LIGHT-EMITTING DIODE TECHNOLOGY AND APPLICATIONS
Received: Dec. 7, 2016
Accepted: Feb. 28, 2017
Published Online: Oct. 10, 2018
The Author Email: Carlo De Santi (carlo.desanti@dei.unipd.it)