Chinese Journal of Lasers, Volume. 10, Issue 2, 70(1983)

Relationship between transient and stationary stability in semiconductor stripe-geometry DH lasers

Chen Weixi, Niu Jinzhen, and Guo Changzhi
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  • [in Chinese]
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    References(5)

    [1] [1] Τ. H. Zachos, J. C. Dyment; IEEE J. Quant. Electr;1970,QE-6, 317-324.

    [2] [2] D. D. Cook, F. E. Nash; J. Appl. Phys., 1975, 46, No. 4, 1660-1672.

    [3] [3] P. A. Kirrby et al.; IEEE J. Quant. Electr., 1977, QE-13, No. 8, 705-719.

    [4] [4] N. G. Basov; IEEE J. Quant. Electr., 1968, QE-4, No.4, 855-864.

    [5] [5] C. У. Chen, S. Wany; Appl. Phys. Lett., 1980, 37, No. 3, 253-260.

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    Chen Weixi, Niu Jinzhen, Guo Changzhi. Relationship between transient and stationary stability in semiconductor stripe-geometry DH lasers[J]. Chinese Journal of Lasers, 1983, 10(2): 70

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    Paper Information

    Category: laser devices and laser physics

    Received: Mar. 9, 1982

    Accepted: --

    Published Online: Aug. 31, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

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