Fig. 1. Experimental setup. TSL: tunable semiconductor laser; 1550 nm VCSEL: EDFA: erbium-doped fiber amplifier.

Fig. 2. (a) Polarization-resolved P–I curve and optical spectra for a solitary 1550 nm VCSEL biased at (b) 4.00, (c) 7.40, and (d) 7.60 mA, respectively.

Fig. 3. Polarization-resolved power versus injected power Pinj under I=4.00  mA and Δν1=5.65  GHz, where the solid line and dash line with dot represent the x-PC and y-PC, respectively.

Fig. 4. Optical spectra (left column) centered at νx and the corresponding RF spectra (right column) for the total power of the 1550 nm VCSEL biased at 4.00 mA subject to CPOI with Δν1=1.16  GHz and different injected powers. The injected powers in (a)–(e) are 0, 0.019, 0.059, 0.115, and 1.250 mW, respectively.

Fig. 5. Mapping of the dynamical behaviors of the 1550 nm VCSEL subject to CPOI in the parameter space of Pinj and Δν1 under I=4.00  mA. P1 & PS I, P2 & PS I, and SIL & PS I represent type I PS accompanying with P1 oscillation, P2 oscillation, and SIL, respectively, and the white region (marked with “others”) represents the region without PS.

Fig. 6. Polarization-resolved power versus injected power Pinj under I=7.60  mA and Δν2=11.71  GHz, where the solid line and dash line with dot represent the y-PC and x-PC, respectively.

Fig. 7. Optical spectra (left column) centered at νy and the corresponding RF spectra (right column) of the total power of the 1550 nm VCSEL biased at 7.60 mA subject to CPOI under Δν2=3.25  GHz and different injected powers. The injected powers in (a)–(d) are 0, 0.040, 0.108, and 0.680 mW, respectively.

Fig. 8. Mapping of the dynamical behaviors of the 1550 nm VCSEL subject to CPOI in the parameters space of Pinj and Δν2 under I=7.60  mA. P1 & PS II, P2 & PS II, and SIL & PS II denote type II PS accompanying with P1 oscillation, P2 oscillation and SIL, respectively;the white region (marked with “others”) denotes without PS.