<trans-title>Piezoelectricity of Graphene-like Monolayer ZnO and GaN</trans-title>

4. Total densities of states (TDOS) and partial DOS (PDOS) of monolayers g-ZnO (a) and g-GaN (b) under the conditions of 1% tensile strain along the armchair direction

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Table 1. Elastic stiffness constants C₁₁and C₁₂ (N·m^-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C₁₁- C₁₂)
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Table 1. Elastic stiffness constants C₁₁and C₁₂ (N·m^-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C₁₁- C₁₂)
Material Clamped-ion Relaxed-ion
C₁₁ C₁₂ Δ C₁₁ C₁₂ Δ
g-ZnO 109 35 75 86 57 29
g-GaN 157 37 120 135 58 77
h-BN^[6] 300 53 247 291 62 229
Graphene^[26] - - - 358 60 298

Table 2. Calculated Clamped- and Relaxed-ion e₁₁(×10^-10, C·m^-1) and d₁₁ (pm·V^-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)
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Table 2. Calculated Clamped- and Relaxed-ion e₁₁(×10^-10, C·m^-1) and d₁₁ (pm·V^-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)
Material Clamped-ion Relaxed-ion
e₁₁ d₁₁ e₁₁ d₁₁
g-ZnO 1.7 2.3 2.7 9.4
g-GaN 2.4 2.0 1.7 2.2
Bulk ZnO^[2] - - - 9.9 (d₃₃)
Bulk GaN^[27] - - - 3.1 (d₃₃)
h-BN^[6] 3.7 1.5 1.4 0.6

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Hui XIANG, Hui QUAN, Yiyuan HU, Weiqian ZHAO, Bo XU, Jiang YIN. Piezoelectricity of Graphene-like Monolayer ZnO and GaN[J]. Journal of Inorganic Materials, 2021, 36(5): 492

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Paper Information

Category: RESEARCH ARTICLE

Received: Jun. 22, 2020

Accepted: --

Published Online: Nov. 25, 2021

The Author Email:

DOI:10.15541/jim20200346

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Elastic stiffness constants C11 and C12 (N·m-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C11 - C12)

Table 1. Elastic stiffness constants C11 and C12 (N·m-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C11 - C12)

Table 2. Calculated Clamped- and Relaxed-ion e11 (×10-10, C·m-1) and d11 (pm·V-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)

Table 2. Calculated Clamped- and Relaxed-ion e11 (×10-10, C·m-1) and d11 (pm·V-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)

Table 1. Elastic stiffness constants C₁₁and C₁₂ (N·m^-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C₁₁- C₁₂)

Table 1. Elastic stiffness constants C₁₁and C₁₂ (N·m^-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C₁₁- C₁₂)

Table 2. Calculated Clamped- and Relaxed-ion e₁₁(×10^-10, C·m^-1) and d₁₁ (pm·V^-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)

Table 2. Calculated Clamped- and Relaxed-ion e₁₁(×10^-10, C·m^-1) and d₁₁ (pm·V^-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)