[2] [2] Bennett B R, Ancona M G, Boos J B. Compound semiconductors for low-power p-channel field-effect transistors[J]. MRS Bulletin, 2009, 34(7): 530-536.

[3] [3] Pawlowski J, Szumniak P, Bednarek S. Electron spin rotations induced by oscillating Rashba interaction in a quantum wire[J]. Physical Review B, 2016, 93(4): 045309.

[4] [4] CHEN Y, HUANG S, PAN D, et al. Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet[J]. Npj 2D Materials and Applications, 2021, 5(1): 1-8.

[6] [6] Trinh H D, Nguyen M T, Lin Y C, et al. Band alignment parameters of Al2O3/InSb metal-oxide-semiconductor structure and their modification with oxide deposition temperatures[J]. Applied Physics Express, 2013, 6(6): 1-3.

[7] [7] Black L E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface[D]. Canberra: The Australian National University, 2015.

[8] [8] Baik M, Kang H K, Kang Y S, et al. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition[J]. Scientific Reports, 2017, 7(1): 1-11.

[9] [9] Kim H S, Ok I, ZHANG M, et al. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer[J]. Applied Physics Letters, 2008, 93(6): 062111.

[10] [10] Vavasour O J, Jefferies R, Walker M, et al. Effect of HCl cleaning on InSb-Al2O3 MOS capacitors[J]. Semiconductor Science and Technology, 2019, 34(3): 035032.

[11] [11] Luc Q H, CHANG E Y, Trinh H D, et al. Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors[J]. Japanese Journal of Applied Physics, 2014, 53(4S): 04EF04.

[12] [12] Vavasour O J. Dielectrics for Narrow Bandgap III-V Devices[D]. Coventry: University of Warwick, 2018.

[13] [13] Winter R, Ahn J, Mcintyre P C, et al. New method for determining flat-band voltage in high mobility semiconductors[J]. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures, 2013, 31(3): 0604.

[14] [14] McNutt M, Sah C T. Determination of the MOS oxide capacitance[J]. Journal of Applied Physics, 1975, 46(9): 3909-3913.

[15] [15] Walstra S V, Sah C T. Extension of the McNutt-Sah method for measuring thin oxide thicknesses of MOS devices[J]. Solid State Electronics, 1998, 4(42): 671-673.

[16] [16] Maserjian J, Petersson G, Svensson C. Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon[J]. Solid-state Electronics, 1974, 17: 335-339.

[17] [17] RiccB, Olivo P, Nguyen T, et al. Oxide-thickness determination in thin-insulator MOS structures[J]. IEEE Transactions on Electron Devices, 1988, 35(4): 432-438.

[18] [18] WEI D. Study of High Dielectric Constant Oxides on GaN for Metal Oxide Semiconductor Devices[D]. Manhattan: Kansas State University, 2014.

[19] [19] Lee W C, Cho C J, Choi J H, et al. Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator -semiconductor devices[J]. Electronic Materials Letters, 2016, 12(6): 768-772.

[20] [20] Taoka N, Yokoyama M, Kim S H, et al. Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors[J]. Applied Physics Express, 2016, 9(11): 111202.