Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 10, 1317(2022)
Parasitic gate effect in photo-resist strip process
Fig. 2. Ioff corresponding to normal equipment and abnormal equipment
Fig. 3. Relationship between Al ion concentration and Ioff in stripper
Fig. 5. Transfer curves with different stripping time.(a)Different times for Com ITO strip in abnormal equipment;(b)Different times for TFT after Array process in abnormal equipment;(c)Normal samples and abnormal samples under illumination.
Fig. 6. Formation process and mechanism of parasitic gate effect.(a)Without Al2O3 parasitic gate;(b)With Al2O3 parasitic gate.
Fig. 7. Suppression of parasitic gate effects by back channel roughening
Fig. 8. Suppression effect of increasing PVX film thickness on parasitic gate effects
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Dan LIU, Zhong-hao HUANG, Yi LIU, Xu WU, Tai-ye MIN, Fei GUAN, Liang FANG, Cheng-jun QI, Wei SHEN, Yong-qiang ZHAO, Zhi-yong NING, Hao-lan FANG. Parasitic gate effect in photo-resist strip process[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(10): 1317
Category: Research Articles
Received: May. 8, 2022
Accepted: --
Published Online: Oct. 10, 2022
The Author Email: Zhong-hao HUANG (huangzhonghao@boe.com.cn)