Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 10, 1317(2022)

Parasitic gate effect in photo-resist strip process

Dan LIU1,2, Zhong-hao HUANG1、*, Yi LIU3, Xu WU1, Tai-ye MIN1, Fei GUAN1, Liang FANG2, Cheng-jun QI1, Wei SHEN1, Yong-qiang ZHAO1, Zhi-yong NING1, and Hao-lan FANG1
Author Affiliations
  • 1Chongqing BOE Optoelectronics Technology Co.,Ltd.,Chongqing 400700,China
  • 2Department of Applied Physics,Chongqing University,Chongqing 400044,China
  • 3Chongqing school,University of Chinese Academy of Sciences,Chongqing 400714,China
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    Figures & Tables(11)
    Schematic diagram of ADS Pro product process
    Ioff corresponding to normal equipment and abnormal equipment
    Relationship between Al ion concentration and Ioff in stripper
    Relationship between stripping time and Ioff
    Transfer curves with different stripping time.(a)Different times for Com ITO strip in abnormal equipment;(b)Different times for TFT after Array process in abnormal equipment;(c)Normal samples and abnormal samples under illumination.
    Formation process and mechanism of parasitic gate effect.(a)Without Al2O3 parasitic gate;(b)With Al2O3 parasitic gate.
    Suppression of parasitic gate effects by back channel roughening
    Suppression effect of increasing PVX film thickness on parasitic gate effects
    • Table 1. Summary of experimental conditions

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      Table 1. Summary of experimental conditions

      实验区块探究内容TFT样品编号
      区块一正常设备、异常设备的光刻胶剥离液成分差异-
      区块二剥离液中金属离子浓度与Ioff的关系A1~A3
      公共电极光刻胶剥离制程剥离次数对Ioff的影响A4~A6
      Array制程完成后采用公共电极光刻胶剥离清洗次数与Ioff的关系B1、B2
      区块三钝化层成膜前等离子体处理抑制寄生栅极效应C1~C3
      钝化层膜厚增加抑制寄生栅极效应D1、D2
    • Table 2. Comparison of stripper composition between normal equipment and abnormal equipment

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      Table 2. Comparison of stripper composition between normal equipment and abnormal equipment

      组分单位正常设备异常设备
      Al×10-99.4443.3
      NMF×10-251.3851.65
      MDG×10-247.0646.97
      Amine×10-21.51.36
      Additive×10-20.070.02
      光刻胶×10-21.712.04
    • Table 3. Solutions for reducing parasitic currents

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      Table 3. Solutions for reducing parasitic currents

      减少有害流的措施解决方案解决方案的弊端方案可行性
      增加有害流的长度

      TFT器件沟道

      宽度L增加

      底栅TFT开态电流Ion下降
      降低有害流的密度增加钝化层厚度,降低寄生电容透过率下降,但可控可行
      降低钝化层介电常数,降低寄生电流钝化层成膜质变化,需进行信赖性测试
      减少有害流的导通性钝化层成膜前等离子体处理延时,背沟道粗糙化可行
      钝化层成膜前等离子体处理功率增加,背沟道粗糙化可行
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    Dan LIU, Zhong-hao HUANG, Yi LIU, Xu WU, Tai-ye MIN, Fei GUAN, Liang FANG, Cheng-jun QI, Wei SHEN, Yong-qiang ZHAO, Zhi-yong NING, Hao-lan FANG. Parasitic gate effect in photo-resist strip process[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(10): 1317

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    Paper Information

    Category: Research Articles

    Received: May. 8, 2022

    Accepted: --

    Published Online: Oct. 10, 2022

    The Author Email: Zhong-hao HUANG (huangzhonghao@boe.com.cn)

    DOI:10.37188/CJLCD.2022-0160

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