Fig. 1. (Color online) Schematic illustration of the DUV-LEDs structure.

Fig. 2. (Color online) I–V and edge emission I–L characteristics of the measured UV-C LD. The inset figure shows the edge emission spectrum at 0.5 A forward current^[7].

Fig. 3. (Color online) IQE as a function of DD in an underlying layer under weak excitation with excess carrier density of 1 × 10¹⁸ cm⁻³.

Fig. 4. (Color online) Hall-effect temperature-dependent (a) hole concentration, (b) hole mobilities, and (c) hole concentration and mobility measured down to T = 4 K.