[1] [1] KLAMKIN J, ZHAO H W, SONG B W, et al. Indium phosphide photonic integrated circuits: technology and applications［C］//2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). San Diego, CA, USA. IEEE, 2018: 8-13.

[2] [2] ZHOU Y, ZHANG C W, WANG P J. Study on the regulation mechanism of electronic structure and optical properties of Fe doped InP［J］. Journal of Synthetic Crystals, 2013, 42(11): 2432-2438 (in Chinese).

[3] [3] FENG Y H, SHEN G Y, ZHAO Y W, et al. Lattice perfection of dislocation-free (100) Te-GaSb single crystal polished substrate［J］. Journal of Synthetic Crystals, 2022, 51(6): 1003-1011 (in Chinese).

[4] [4] LIANG R H, ZENG Z M, SUN N F, et al. Design and analysis of the thermal field of InP high pressure single crystal furnace［J］. Chinese Journal of Scientific Instrument, 2018, 39(11): 95-102 (in Chinese).

[5] [5] ISHIKAWA Y, KOUNOIKE K, NISHIOKA M, et al. Preparation of n-type InP substrates by vertical boat growth［C］//2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). Takamatsu, Japan. IEEE, 2010: 1-4.

[6] [6] GAULT W A, MONBERG E M, CLEMANS J E. A novel application of the vertical gradient freeze method to the growth of high quality III-V crystals［J］. Journal of Crystal Growth, 1986, 74(3): 491-506.

[7] [7] WU L X, LIU X L, YE S Z, et al. Low temperature photoluminescence study on LEC-InP single crystals［J］. Chinese Journal of Semiconductors, 1984, 5(2): 132-138 (in Chinese).

[8] [8] SUN T N， SZULIN L, SHUTSENG K. The preparation of semi insulating and low dislocation density InP single crystals［C］//Proceedings of the Second International Conference on Semi-Indulating Ⅲ-Ⅴ Materials, 1982: 61-67.

[9] [9] ZHAO Y W, DUAN M L, LU W, et al. VGF growth and property of 4 inch diameter InP single crystals with low dislocation density［J］. Journal of Synthetic Crystals, 2017, 46(5): 792-796 (in Chinese).

[10] [10] SHAO H M, SUN N F, ZHANG X D, et al. High quality 6-inch InP single crystal grown by LEC method［J］. Semiconductor Technology, 2020, 45(8): 617-622+651 (in Chinese).

[11] [11] ASAHI T, KAINOSHO K, KAMIYA T, et al. Growth of 100-mm-diameter InP single crystals by the vertical gradient freezing method［J］. Japanese Journal of Applied Physics, 1999, 38: 977.

[12] [12] SHI Y L, SUN N F, XU C Y. Thermal field of 6-inch indium phosphide single crystal growth by semi-sealed Czochralski method［J］. Journal of Inorganic Materials, 2023, 38(3): 335-342.

[13] [13] LI X. Study on convection and heat transfer during the growth of InP crystal by vertical temperature gradient method［D］.Tianjin: Tianjin Polytechnic University, 2021: 17-54.(in Chinese)

[14] [14] LIU J. Thermal field simulation and the effect of static magnetic field for directional solidification of multi-crystalline silicon［D］.Nanchang: Nanchang University, 2016: 17-21 (in Chinese).