The invisible defects on photovoltaic modules such as cracks, fragments, black spots, and shadings are important to the power efficiency, the lifespan, and the safety of the photovoltaic modules. In order to realize on-site imaging of such defects under high irradiance level, the optimization of the imaging system was proposed, including the band-pass near-infrared imaging system, the double-exposure background-light decrease, and no-linear image sharping. The image dynamic model of the electroluminescence or photoluminescence imaging under high irradiance level was established, and experimental device of the electroluminescence imaging for the silicon photovoltaic modules based on a band-pass InGaAs camera was set up. Experimental results show that the high quality images of the defects on the photovoltaic modules under the irradiance of 300W/m² can be obtained by our method.