Fig. 1. Potential application examples using SiC devices at various voltage and frequency levels^[15].

Fig. 2. (Color online) SiC power MOSFET. (a) Variation in threshold voltage with the total ionizing dose at ON, OFF, and different frequencies. (b) Relation between the change in threshold voltage and applied switching frequency under the same total ionizing dose.

Fig. 3. (Color online) SiC power MOSFETs at ON, OFF, and different frequencies. (a) Variation in drain–source leakage current with the total ionizing dose. (b) Change in breakdown voltage with the total ionizing dose.

Fig. 4. A model hole trapping [(a) to (b)] and detrapping [(c) to (a)] processes are indicated, along with the intermediate compensation/reverse-annealing phenomenon [(b) to (c) and (c) to (b)]^[18].

Fig. 5. (Color online) Comparison of threshold voltage of SiC Power MOSFETs with the total ionizing dose under 15 and 0 V segment gate bias, constant 0 V gate bias, and constant 15 V gate bias.