Chinese Optics Letters, Volume. 23, Issue 9, 091302(2025)

High-efficiency polarized GaN light-emitting diode based on asymmetric metal nanograting metasurfaces On the Cover

Miao Wang1,2、*, Wentian Xu2, Hong Xu2,3, Keying Cao2,3, Juemin Yi1,2, Bing Cao3, Qinhua Wang3, Jianfeng Wang1,2, and Ke Xu1,2、**
Author Affiliations
  • 1Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 3School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
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    Miao Wang, Wentian Xu, Hong Xu, Keying Cao, Juemin Yi, Bing Cao, Qinhua Wang, Jianfeng Wang, Ke Xu, "High-efficiency polarized GaN light-emitting diode based on asymmetric metal nanograting metasurfaces," Chin. Opt. Lett. 23, 091302 (2025)

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    Paper Information

    Category: Integrated Optics

    Received: Mar. 9, 2025

    Accepted: May. 9, 2025

    Published Online: Aug. 13, 2025

    The Author Email: Miao Wang (mwang2015@sinano.ac.cn), Ke Xu (kxu2006@sinano.ac.cn)

    DOI:10.3788/COL202523.091302

    CSTR:32184.14.COL202523.091302

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