The multiple sulfides Cd0.5Zn0.5S and cuprous oxide Cu2O have high carrier mobility, and their production processes are simpler than that of the traditional electron transport layer and hole transport layer. Therefore, these two materials have very good application potential in perovskite solar cells. The solar cells with Cd0.5Zn0.5S and Cu2O as the transmission layer and lead-based halide perovskites as the absorption layer were simulated using SCAPS-1D software. The influence of material thickness, doping concentration and bandgap on the perovskite solar cells performance was studied. The results show that as the thickness of the absorber layer (CH3NH3PbI3) increases, the cells performance gradually improves, but when it increases to a certain thickness, the cells performance decreases. The optimal thickness of the absorber layer is 400 nm. Moreover, when the defect state density of the absorbing layer is less than 1.0×1014 cm-3, the defect state density has little influence on the cells performance. In addition, the bandgap of the absorber has important influence on the cells performance, and the best bandgap is about 1.5 eV. The best performance parameters for this solar cells are obtained as an open-circuit voltage of 1.010 V, a short-circuit current density of 31.30 mA/cm2, a fill factor of 80.01%, and a conversion efficiency of 25.20%. Therefore, the Cu2O/CH3 NH3PbI3/Cd0.5Zn0.5S halide solar cell is a photovoltaic device with great development potential.