High Power Laser and Particle Beams, Volume. 37, Issue 3, 035022(2025)
Simulation study on radiation damage effects of GaAs solar cells in space
Figures & Tables(10)
Fig. 1. Schematic diagram of the structure of GaInP/GaAs/Ge solar cells
Fig. 2. Comparison of I-V curves between simulation and Silvaco Atlas simulation
Fig. 3. I-V characteristic curve of GaAs solar cells with different fluences levels γ irradiation
Fig. 4. Comparison of I-V curves between simulation and Silvaco Atlas simulation
Table 1. [in Chinese]
View tableView in ArticleTable 1. [in Chinese]
valence band DOS/cm−3 permittivity optical recombination rate/(cm3·s−1) SRH recombination electron lifetime/s SRH recombination hole lifetime/s 9×1018 12.9 1.8×10−10 4.5×10−9 2×10−8
Table 1. Solar cell material parameter settings
View tableView in ArticleTable 1. Solar cell material parameter settings
parameter temperature/K electron affinity/eV electron mobility/(cm2·V−1·s−1) hole mobility/ (cm2·V−1·s−1) bandgap/eV conduction band DOS/cm−3 300 4.07 8800 400 1.424 4.7×1017
Table 2. Electron and hole trap parameters generated by irradiated solar cells [6]
View tableView in ArticleTable 2. Electron and hole trap parameters generated by irradiated solar cells [6]
fluence Fe/cm−2 electron traps in base hole traps in emitter Et/eV Nt/cm−3 Sn/cm−2 Et/eV Nt/cm−3 Sp/cm−2 1×1014 Ec−0.14 1.8×1013 5.7×10−13 Ev+0.71 3.0×1012 2.2×10−13 Ec−0.41 8.2×1012 2.6×10−13 − − − Ec−0.71 7.0×1012 8.3×10−13 − − − Ec−0.90 8.8×1011 3.0×10−11 − − − 1×1015 Ec−0.41 3.0×1013 2.6×10−13 Ev+0.13 2.2×1014 2.6×10−13 Ec−0.71 1.7×1013 8.3×10−13 Ev+0.29 4.0×1014 2.6×10−13 Ec−0.90 2.8×1013 3.0×10−11 Ev+0.35 8.0×1013 7.2×10−15 − − − Ev+0.71 6.4×1013 2.2×10−13 1×1016 Ec−0.41 8.8×1013 2.6×10−13 Ev+0.13 8.4×1014 2.6×10−13 Ec−0.71 5.0×1013 8.3×10−13 Ev+0.29 1.6×1015 2.6×10−13 Ec−0.90 6.5×1014 3.0×10−11 Ev+0.35 1.0×1015 7.2×10−15 − − − Ev+0.71 2.7×1014 2.2×10−13
Table 3. Comparison of electrical characteristics between simulated and experimental GaAs solar cells
View tableView in ArticleTable 3. Comparison of electrical characteristics between simulated and experimental GaAs solar cells
Isc/mA Voc/V pmax/(mW/cm2) fill factor ŋ/% simulation 26.51 0.9968 23.19 0.8774 17.14 experiment − − 21.25 0.7800 15.70 Silvaco TCAD 26.44 0.9960 21.67 0.8230 16.48
Table 4. 1 MeV at different fluence levels changes in electrical characteristics of GaAs solar cells after irradiation
View tableView in ArticleTable 4. 1 MeV at different fluence levels changes in electrical characteristics of GaAs solar cells after irradiation
Isc/mA Voc/V Pmax/(mW/cm2) fill factor ŋ/% pre-radiation 26.51 0.9968 23.19 0.8774 17.14 fluence level/(e/cm2) 1×1014 24.84 0.9789 20.82 0.8562 15.39 1×1015 21.44 0.9175 15.83 0.8045 11.70 1×1016 17.25 0.8805 12.08 0.7956 8.931
Table 5. Comparison of normalized value of electrical characteristics between simulated and experimental GaAs solar cells
View tableView in ArticleTable 5. Comparison of normalized value of electrical characteristics between simulated and experimental GaAs solar cells
fluence level/(e/cm2) parameter Isc/mA Voc/V Pmax/(mW/cm2) fill factor ŋ/% 1×1014 simulation 0.937 0.982 20.82 0.8562 15.39 experiment 0.94 0.96 20 0.78 15.1 difference 1(%) 0.319 2.29 0.041 9.76 1.92 silvaco TCAD 0.936 0.973 19.50 0.814 14.83 difference 2(%) 0.106 0.924 6.76 5.18 3.77 1×1015 simulation 0.808 0.920 15.83 0.8045 11.70 experiment 0.82 0.91 16 0.77 11.8 difference 1(%) 1.46 1.09 1.06 4.48 0.847 silvaco TCAD 0.806 0.892 14.67 0.775 11.16 difference 2(%) 0.248 3.13 7.90 3.80 4.83 1×1016 simulation 0.650 0.883 12.08 0.7956 8.931 experiment 0.60 0.84 11.25 0.76 8.3 difference 1(%) 8.33 5.11 7.37 4.68 7.60 silvaco TCAD 0.648 0.846 10.98 0.766 8.35 difference 2(%) 0.308 4.37 10.0 3.86 6.95
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Jiaxin Wei, Jianhong Hao, Qiang Zhao, Jieqing Fan, Fang Zhang, Bixi Xue, Zhiwei Dong. Simulation study on radiation damage effects of GaAs solar cells in space[J]. High Power Laser and Particle Beams, 2025, 37(3): 035022
Paper Information
Category: Cutting-edge Interdisciplinary Technologies and Applications of Special Power Supplies
Received: Aug. 23, 2024
Accepted: Dec. 10, 2024
Published Online: Apr. 29, 2025
The Author Email: Qiang Zhao (zhaoq.@iapcm.ac.cn)
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