Chinese Journal of Lasers, Volume. 50, Issue 19, 1901004(2023)
High‐Power Narrow‐Linewidth Semiconductor Laser Based on Surface Curved Gratings
Fig. 1. Epitaxial wafer grown by MOCVD and PL test result. (a) Epitaxial wafer; (b) PL test result
Fig. 2. Light field distributions and normalized intensity distributions of light field under different modes. (a)‒(c) Light field distribution; (d)‒(f) normalized intensity distributions of light field
Fig. 8. Spectra of curved grating edge-emitting DFB semiconductor lasers under different injection currents. (a) 450 mA; (b) 500 mA; (c) 550 mA
Fig. 9. Spectra of different lasers. (a) FP laser; (b) linear grating DFB laser; (c) curved grating DFB laser
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Hui Tang, Ruidong Li, Yonggang Zou, Kun Tian, Yujun Guo, Jie Fan. High‐Power Narrow‐Linewidth Semiconductor Laser Based on Surface Curved Gratings[J]. Chinese Journal of Lasers, 2023, 50(19): 1901004
Category: laser devices and laser physics
Received: Aug. 15, 2022
Accepted: Oct. 17, 2022
Published Online: Oct. 18, 2023
The Author Email: Yonggang Zou (zouyg@cust.edu.com)