Chinese Journal of Lasers, Volume. 50, Issue 19, 1901004(2023)

High‐Power Narrow‐Linewidth Semiconductor Laser Based on Surface Curved Gratings

Hui Tang, Ruidong Li, Yonggang Zou*, Kun Tian, Yujun Guo, and Jie Fan
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, Jinlin, China
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    Figures & Tables(9)
    Epitaxial wafer grown by MOCVD and PL test result. (a) Epitaxial wafer; (b) PL test result
    Light field distributions and normalized intensity distributions of light field under different modes. (a)‒(c) Light field distribution; (d)‒(f) normalized intensity distributions of light field
    Schematic of unstable cavity with high-order curved grating
    Curved grating mask pattern
    SEM images of curved grating. (a) Surface view; (b) side wall view
    COS packaged curved grating semiconductor laser
    P‒I‒V characteristics of different lasers
    Spectra of curved grating edge-emitting DFB semiconductor lasers under different injection currents. (a) 450 mA; (b) 500 mA; (c) 550 mA
    Spectra of different lasers. (a) FP laser; (b) linear grating DFB laser; (c) curved grating DFB laser
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    Hui Tang, Ruidong Li, Yonggang Zou, Kun Tian, Yujun Guo, Jie Fan. High‐Power Narrow‐Linewidth Semiconductor Laser Based on Surface Curved Gratings[J]. Chinese Journal of Lasers, 2023, 50(19): 1901004

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 15, 2022

    Accepted: Oct. 17, 2022

    Published Online: Oct. 18, 2023

    The Author Email: Yonggang Zou (zouyg@cust.edu.com)

    DOI:10.3788/CJL221148

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