High Power Laser and Particle Beams, Volume. 36, Issue 9, 095001(2024)
Technology and application of the voltage-controlled pulse power semiconductor devices
Fig. 1. Schematic diagram of energy compression-storage-release in pulse power technology
Fig. 2. Equivalent model of capacitor energy storage pulse power circuit
Fig. 5. Cross-section schematic and equivalent circuit diagram of CS-MCT and equivalent circuit of conventional MCT
Fig. 7. Cross-section schematic of HiA-MCT and operation mechanism
Fig. 8. Pulse output characteristics and carrier concentration distribution of HiA-MCT and con-MCT
Fig. 9. SB-MCT device structure schematic and equivalent circuit diagram
Fig. 10. Operation characteristics of SB-MCT and conventional CS-MCT
Fig. 11. MCT single pulse discharge waveform with voltage of 1 100 V
Fig. 13. Pulse discharge waveform of Pulse Forming Network (PFN) circuit based on MCT
Fig. 14. Circuit schematic and prototype of high-voltage DC circuit breaker based on MCT
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Ruize Sun, Wanjun Chen, Chao Liu, Honghua Liu, Hongmei Yao, Bo Zhang. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36(9): 095001
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Received: Apr. 11, 2024
Accepted: Jul. 18, 2024
Published Online: Oct. 15, 2024
The Author Email: Wanjun Chen (wjchen@uestc.edu.cn)