High Power Laser and Particle Beams, Volume. 36, Issue 9, 095001(2024)

Technology and application of the voltage-controlled pulse power semiconductor devices

Ruize Sun1, Wanjun Chen1、*, Chao Liu1, Honghua Liu2, Hongmei Yao3, and Bo Zhang1
Author Affiliations
  • 1School of Integrated Circuits Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
  • 2Honglin Company of China Aerospace Sanjiang Group, Xiaogan 432000, China
  • 3Chengdu ZDHC Limited, Chengdu 610095, China
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    Figures & Tables(14)
    Schematic diagram of energy compression-storage-release in pulse power technology
    Equivalent model of capacitor energy storage pulse power circuit
    Structure schematic and equivalent circuit of MCT device
    Comparison of MCT and IGBT performance tests
    Cross-section schematic and equivalent circuit diagram of CS-MCT and equivalent circuit of conventional MCT
    Simulation comparison between CS-MCT and conventional MCT
    Cross-section schematic of HiA-MCT and operation mechanism
    Pulse output characteristics and carrier concentration distribution of HiA-MCT and con-MCT
    SB-MCT device structure schematic and equivalent circuit diagram
    Operation characteristics of SB-MCT and conventional CS-MCT
    MCT single pulse discharge waveform with voltage of 1 100 V
    Repetitive pulse discharge waveform of MCT
    Pulse discharge waveform of Pulse Forming Network (PFN) circuit based on MCT
    Circuit schematic and prototype of high-voltage DC circuit breaker based on MCT
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    Ruize Sun, Wanjun Chen, Chao Liu, Honghua Liu, Hongmei Yao, Bo Zhang. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36(9): 095001

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    Paper Information

    Category:

    Received: Apr. 11, 2024

    Accepted: Jul. 18, 2024

    Published Online: Oct. 15, 2024

    The Author Email: Wanjun Chen (wjchen@uestc.edu.cn)

    DOI:10.11884/HPLPB202436.240120

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