Chinese Journal of Lasers, Volume. 36, Issue 9, 2277(2009)

High Power Semiconductor Lasers of New Window on Insulation Film of AlxNy

Qiao Zhongliang*, Bo Baoxue, Yao Yanping, Gao Xin, Zhang Jing, Wang Yuxia, Liu Chunling, Lu Peng, Li Hui, and Qu Yi
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    [3] [3] M.Matsumoto, Mitsuhiro, SasaKi et al.. High-power 780 nm AlGaAs narrow-stripe window structure lasers with window grown on facets[J]. Japan. J. Appl. Phys., 1993, 32(5): 665

    [4] [4] C. Silfvenius, P. Blixt, C. Lindstrom et al.. High COMD, nitridized InAlGaAs laser facets for high reliability 50 W bar operation at 805 nm[C]. SPIE, 2004, 5336: 132-143

    [5] [5] Xingsheng Liu,Martin Hai Hu, Hong Ky Nguyen et al.. Comparison between epi-down and epi-up bonded high-power single-mode 980 nm semiconductor lasers[J]. IEEE, Transactions on Advanced Packaging, 2004, 27(4): 640-646

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    Qiao Zhongliang, Bo Baoxue, Yao Yanping, Gao Xin, Zhang Jing, Wang Yuxia, Liu Chunling, Lu Peng, Li Hui, Qu Yi. High Power Semiconductor Lasers of New Window on Insulation Film of AlxNy[J]. Chinese Journal of Lasers, 2009, 36(9): 2277

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    Paper Information

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    Received: Oct. 31, 2008

    Accepted: --

    Published Online: Oct. 9, 2009

    The Author Email: Zhongliang Qiao (qiao2320002002@yahoo.com.cn)

    DOI:10.3788/cjl20093609.2277

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