Researching | Characteristic analysis of 1.06 μm long-cavity diode lasers based on asymmetric waveguide structures

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 557(2024)

Characteristic analysis of 1.06 μm long-cavity diode lasers based on asymmetric waveguide structures

Ren-Ze ZHAO, Xin GAO, Ding-Yang FU, Yue ZHANG, Peng SU, and Bao-Xue BO^*

Author Affiliations

National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，China

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References(11)

[1] Chen Z, Bao L, Bai J et al. Performance limitation and mitigation of longitudinal spatial hole burning in high-power diode lasers; proceedings of the Novel In-Plane Semiconductor Lasers XI[C], 245-252(2012).

[2] Golovin V S, Shashkin I S, Slipchenko S O et al. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis[J]. Quantum Electronics, 50, 147-152(2020).

[3] Rinner F, Rogg J, Friedmann P et al. Longitudinal carrier density measurement of high power broad area laser diodes[J]. Applied Physics Letters, 80, 19-21(2002).

[4] Avrutin E A, Ryvkin B S. Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: A universal analytical estimate and numerical analysis[J]. Journal of Applied Physics, 125, 023108(2019).

[5] Dogan M, Michael C P, Zheng Y et al. Two photon absorption in high power broad area laser diodes; proceedings of the High-Power Diode Laser Technology and Applications XII[C], 131-137(2014).

[6] Ryvkin B S, Avrutin E A. Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers[J]. Journal of Applied Physics, 97, 123103(2005).

[7] Ryvkin B S, Avrutin E A. Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes[J]. Journal of Applied Physics, 97, 113106(2005).

[8] Juodawlkis P W, Plant J J, Donnelly J P et al. Continuous-wave two-photon absorption in a Watt-class semiconductor optical amplifier[J]. Optics Express, 16, 12387-12396(2008).

[9] Abdullah D, Matthew P, Richard D et al. 29.5 W continuous wave output from 100 μm wide laser diode; proceedings of the High-Power Diode Laser Technology and Applications XIII[C](2015).

[10] Kogelnik H[M]. Theory of Dielectric Optical Waveguides, 15-79(1991).

[11] Avrutin E A, Ryvkin B S. Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers[J]. Semiconductor science and technology, 32, 015004(2016).

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Ren-Ze ZHAO, Xin GAO, Ding-Yang FU, Yue ZHANG, Peng SU, Bao-Xue BO. Characteristic analysis of 1.06 μm long-cavity diode lasers based on asymmetric waveguide structures[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 557

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Paper Information

Category: Research Articles

Received: Aug. 7, 2023

Accepted: --

Published Online: Aug. 27, 2024

The Author Email: Bao-Xue BO (bbx@cust.edu.cn)

DOI:10.11972/j.issn.1001-9014.2024.04.016

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology