Chinese Journal of Lasers, Volume. 27, Issue 12, 1072(2000)

GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers

[in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]1
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  • 2[in Chinese]
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    References(5)

    [1] [1] David C.Brown.Ultrahigh-average-power diode-pumped Nd:YAG and Yb:YAG lasers.IEEE J.Quantum Electron., 1997,33(6):861~873

    [2] [2] R.Beach,J.Davin,S.Mitchell et al..Passively Q-switched transverse-diode-pumped Nd3+:YLF laser oscillator. Opt.Lett.,1992,17(2):124~126

    [3] [3] D.Z.Garbuzov,J.H.Abeles,N.A.Morris et al..4 watt,high efficiency,0.81 μm SQW-SCH AlGaAs/GaAs laser diode with broadened waveguides.in IEEE/OSA Conf.Lasers Optics,Anaheim,CA,June 1996.79~80

    [4] [4] L.J.Mawst,A.Bhattacharya,J.Lopez et al..8 W continuous wave front-facet power from broad waveguide Al-free 980 nm diode lasers.Appl.Phys.Lett.,1996,69(11):1532~1534

    [5] [5] V.V.Bezotosnyi,Kh.Kh.Kumykov,N.V.Markova.Ultimate output parameters of laser-diode bars and arrays. Quantum Electron.,1997,27(6):481~484 (in Russia)

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers[J]. Chinese Journal of Lasers, 2000, 27(12): 1072

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    Paper Information

    Category: Laser physics

    Received: May. 17, 1999

    Accepted: --

    Published Online: Aug. 9, 2006

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