[1] [1] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699– 712 (2012).

[2] [2] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).

[3] [3] S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).

[4] [4] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).

[5] [5] K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).

[6] [6] O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).

[7] [7] H. Liu, A.-P. Luo, F.-Z. Wang, R. Tang, M. Liu, Z.-C. Luo, W.-C. Xu, C.-J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39, 4591–4594 (2014).

[8] [8] F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

[9] [9] X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).

[10] [10] R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).

[11] [11] Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

[12] [12] Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).

[13] [13] S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).

[14] [14] A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).

[15] [15] C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).

[16] [16] vC.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).

[17] [17] R. H. Stolen and C. Lin, “Self-phase-modulation in silica optical fibers,” Phys. Rev. A 17, 1448–1453 (1978).

[18] [18] G. P. Agrawal, Nonlinear Fiber Optics (Academic, 2007).

[19] [19] T. Baehr-Jones, M. Hochberg, C. Walker, E. Chan, D. Koshinz, W. Krug, and A. Scherer, “Analysis of the tuning sensitivity of silicon- on-insulator optical ring resonators,” J. Lightwave Technol. 23, 4215–4221 (2005).

[20] [20] J. T. Robinson, K. Preston, O. Painter, and M. Lipson, “Firstprinciple derivation of gain in high-index-contrast waveguides,” Opt. Express 16, 16659–16669 (2008).

[21] [21] H. Tsang and Y. Liu, “Nonlinear optical properties of silicon waveguides,” Semicond. Sci. Technol. 23, 064007 (2008).

[22] [22] T. Schneider, Nonlinear Optics inTelecommunications (Springer, 2004).