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Chinese Journal of Lasers, Volume. 25, Issue 1, 37(1998)

Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 1[in Chinese]
  • 2Department of Electrical Engineering, University of Delaware, Newark USA
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    The preliminary result of the frequency stabilization of an InGaAsP semiconductor laser using the optogalvanic effect of a gas absorption cell is reported. The optogalvanic signal of the discharge absorption cell is used as a frequency standard.

    Keywords
    discharge absorption cellfrequency stabilizationoptogalvanic effectInGaAsP semiconductor laser
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell[J]. Chinese Journal of Lasers, 1998, 25(1): 37

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    Paper Information

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    Received: Jul. 25, 1996

    Accepted: --

    Published Online: Oct. 18, 2006

    The Author Email:

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology