Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 37, Issue 3, 658(2010)

Electrons Intervalley Transfer Gain in Bulk GaAs

Ni Zhengji1、*, Chen Lin1, Wang Shuling1, Zhang Dawei1, He Boyong2, and Zhu Yiming1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (0)
    Equations (0)
    References (21)
    Cited By (5)
    Tools
    Paper Information
    Topics
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    Ni Zhengji, Chen Lin, Wang Shuling, Zhang Dawei, He Boyong, Zhu Yiming. Electrons Intervalley Transfer Gain in Bulk GaAs[J]. Chinese Journal of Lasers, 2010, 37(3): 658

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 15, 2009

    Accepted: --

    Published Online: Mar. 11, 2010

    The Author Email: Zhengji Ni (sioi@usst.edu.cn)

    DOI:10.3788/cjl20103703.0658

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology