Journal of Semiconductors, Volume. 45, Issue 11, 112102(2024)
A novel approach for observing band gap crossings using the SIMS technique in Pb1−xSnxTe
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Zeinab Khosravizadeh, Piotr Dziawa, Sania Dad, Andrzej Dabrowski, Rafał Jakiela. A novel approach for observing band gap crossings using the SIMS technique in Pb1−xSnxTe[J]. Journal of Semiconductors, 2024, 45(11): 112102
Category: Research Articles
Received: Apr. 15, 2024
Accepted: --
Published Online: Dec. 23, 2024
The Author Email: Zeinab Khosravizadeh (ZKhosravizadeh)