Journal of Semiconductors, Volume. 45, Issue 11, 112102(2024)

A novel approach for observing band gap crossings using the SIMS technique in Pb1−xSnxTe

Zeinab Khosravizadeh*, Piotr Dziawa, Sania Dad, Andrzej Dabrowski, and Rafał Jakiela
Author Affiliations
  • Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, Warsaw 02668, Poland
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    References(28)

    [11] M Desjonqures, D Spanjaard. Concepts in surface physics. Berlin: Springer, 1, 1(1996).

    [12] D Woodruff. Modern techniques of surface science. Cambridge: Cambridge University Press, 1, 1(2016).

    [13] A P Janssen, P Akhter, C J Harland et al. High spatial resolution surface potential measurements using secondary electrons. Surf Sci, 93, 453(1980).

    [19] M Yu. Sputtering by particle bombardment III. Berlin: Springer, 1, 1(1991).

    [20] W Mönch. Semiconductor surfaces and interfaces. Berlin: Springer, 1, 1(1995).

    [25] L Buchauer. Superconductivity and Fermi surface of Tl: PbTe. Master Dissertation, 1, 1(2017).

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    Zeinab Khosravizadeh, Piotr Dziawa, Sania Dad, Andrzej Dabrowski, Rafał Jakiela. A novel approach for observing band gap crossings using the SIMS technique in Pb1−xSnxTe[J]. Journal of Semiconductors, 2024, 45(11): 112102

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    Paper Information

    Category: Research Articles

    Received: Apr. 15, 2024

    Accepted: --

    Published Online: Dec. 23, 2024

    The Author Email: Zeinab Khosravizadeh (ZKhosravizadeh)

    DOI:10.1088/1674-4926/24040023

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