Spectroscopy and Spectral Analysis, Volume. 40, Issue 9, 2727(2020)

Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots

CAO Jie-hua1,2, TIAN Ming1,2, LIN Tao1,2、*, and FENG Zhe-chuan1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(11)

    [1] [1] Wen Pengyan, Zhang Shuming, Liu Jianping, et al. Journal of Applied Physics, 2016, 119(21): 213107.

    [2] [2] Li D, Sun X, Song H, et al. Advanced Materials, 2012, 24(6): 845.

    [3] [3] Zhang M, Banerjee A, Bhattacharya P. Journal of Crystal Growth, 2011, 323(1): 470.

    [4] [4] Wu Y R, Lin Y Y, Huang H H, et al. Journal of Applied Physics, 2009, 105(1): 013117.

    [6] [6] Li Z C, Liu J P, Feng M X, et al. Journal of Applied Physics, 2013, 114(9): 093105.

    [7] [7] Liu H, Lin T, Wan L, et al. Materials Research Express, 2018, 5(8): 086201.

    [8] [8] Lin T, Kuo H C, Jiang X D, et al. Nanoscale Research Letters, 2017, 12(1): 137.

    [9] [9] Cho Y H, Lee S K, Kwack H S, et al. Applied Physics Letters, 2003, 83(13): 2578.

    [10] [10] Yang F, Wilkinson M, Austin E J, et al. Physical Review Letters, 1993, 70(3): 323.

    [11] [11] Minsky M S, Watanabe S, Yamada N. Journal of Applied Physics, 2002, 91(8): 5176.

    [12] [12] Chichibu S F, Onuma T, Sota T, et al. Journal of Applied Physics, 2003, 93(4): 2051.

    Tools

    Get Citation

    Copy Citation Text

    CAO Jie-hua, TIAN Ming, LIN Tao, FENG Zhe-chuan. Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots[J]. Spectroscopy and Spectral Analysis, 2020, 40(9): 2727

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Aug. 9, 2019

    Accepted: --

    Published Online: Dec. 2, 2020

    The Author Email: LIN Tao (taolin@gxu.edu.cn)

    DOI:10.3964/j.issn.1000-0593(2020)09-2727-05

    Topics