Journal of Semiconductors, Volume. 44, Issue 8, 082501(2023)
Spin injection into heavily-doped n-GaN via Schottky barrier
Get Citation
Copy Citation Text
Zhenhao Sun, Ning Tang, Shuaiyu Chen, Fan Zhang, Haoran Fan, Shixiong Zhang, Rongxin Wang, Xi Lin, Jianping Liu, Weikun Ge, Bo Shen. Spin injection into heavily-doped n-GaN via Schottky barrier[J]. Journal of Semiconductors, 2023, 44(8): 082501
Category: Articles
Received: Jan. 7, 2023
Accepted: --
Published Online: Sep. 21, 2023
The Author Email: Ning Tang (ntang@pku.edu.cn)