Journal of Semiconductors, Volume. 44, Issue 8, 082501(2023)

Spin injection into heavily-doped n-GaN via Schottky barrier

Zhenhao Sun1, Ning Tang1,2、*, Shuaiyu Chen1, Fan Zhang3, Haoran Fan4, Shixiong Zhang1, Rongxin Wang3, Xi Lin4, Jianping Liu3, Weikun Ge1, and Bo Shen1,2
Author Affiliations
  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 2Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University, Beijing 100871, China
  • 3Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
  • 4International Center for Quantum Materials, Peking University, Beijing 100871, China
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    Zhenhao Sun, Ning Tang, Shuaiyu Chen, Fan Zhang, Haoran Fan, Shixiong Zhang, Rongxin Wang, Xi Lin, Jianping Liu, Weikun Ge, Bo Shen. Spin injection into heavily-doped n-GaN via Schottky barrier[J]. Journal of Semiconductors, 2023, 44(8): 082501

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    Paper Information

    Category: Articles

    Received: Jan. 7, 2023

    Accepted: --

    Published Online: Sep. 21, 2023

    The Author Email: Ning Tang (ntang@pku.edu.cn)

    DOI:10.1088/1674-4926/44/8/082501

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