High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining

Zhang Jun; Peng Hangyu; Fu Xihong; Qin Li; Ning Yongqiang; Wang Lijun

doi:10.3788/CJL202047.0701021

Chinese Journal of Lasers, Volume. 47, Issue 7, 701021(2020)

High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining

Zhang Jun, Peng Hangyu, Fu Xihong, Qin Li, Ning Yongqiang, and Wang Lijun

State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, Changchun 130033, China

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Zhang Jun, Peng Hangyu, Fu Xihong, Qin Li, Ning Yongqiang, Wang Lijun. High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining[J]. Chinese Journal of Lasers, 2020, 47(7): 701021

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Paper Information

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Received: Mar. 18, 2020

Accepted: --

Published Online: Jul. 10, 2020

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DOI:10.3788/CJL202047.0701021

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology