Fig. 1. Schematic diagram of the model structure about a-Si:H thin film deposited on the surface of crystalline silicon substrate.

Fig. 2. Atomic structure of a-Si:H/c-Si film after depositing about 8000 groups with the substrate temperature of 500 K (a) and RDF curve of the film layer (b).

Fig. 3. The bond length distribution of the Si-H bond in the a-Si:H film (Deposition conditions: substrate temperature is 500 K, the incident kinetic energy is 1.45 eV, and the incident frequency is 1 ps/group).

Fig. 4. The structure Schematic diagram of Si_yH_x in the a-Si:H film: (a) SiH; (b) SiH₂; (c) SiH₃; (d) HSi₂(s); (e) HSi₂(l); (f) HSi₃.

Fig. 5. Comparisons of Si-H bond energy in each Si_yH_x configuration with solar energy

Fig. 6. Relative contents of dangling bonds, SiH_x and HSi_y(a), relative contents of SiH, SiH₂ and SiH₃ (b), and relative content of HSi₂(s), HSi₂ (l) and HSi₃ (c) in a-Si:H/c-Si films deposited with different substrate temperatures.